Jesus Del Alamo is Director of the Microsystems Technology Laboratories, Donner Professor, and Professor of Electrical Engineering at the Department of Electrical and Computer Science Engineering at the Massachusetts Institute of Technology (MIT). Jesus del Alamo is a native of Soria (Spain). He earned his degree in Telecommunications Engineering from the Polytechnic University of Madrid in 1980. He studied Masters and PhD in Electrical Engineering at Stanford University in California, majoring respectively in 1983 and 1985. From 1977 to 1981 he was with the Solar Energy Institute of the Polytechnic University of Madrid where he researched silicon solar cells under the direction of Prof. Antonio Luque. From 1981 to 1985, he made his doctoral thesis at Stanford University on the transport of minority carriers in silicon heavily doped under the direction of Prof. Richard Swanson. After graduating from Stanford in 1985, he was a researcher at the LSI Laboratories Nippon Telegraph and Telephone Corporationen Atsugi (Japan). One of the first non-Japanese employees of NTT, Dr. Álamo conducted research on field effect transistors based on compound semiconductor heterostructures III-V, an emerging theme in the '80s. Back to the United States in 1988, Jesús del Alamo is hired as an Assistant Professor in the Department of Electrical Engineering and Computer Science at MIT. He progressed through the academic ranks, becoming Associate in 1991 Professor, Professor in 1997 and Donner Professor in 2007. Since 2013, he is the Director of the Laboratory of Microsystems Technology, a laboratory where more than 500 students and post doctorates, conduct research projects a wide range of areas of micro and nanotechnology. Throughout his career, Prof. del Alamo has conducted research on transistors and other electronic devices in a wide JESUS POPLAR variety of materials. He has worked with solar cells, bipolar transistors and transistors field effect. If devices of heteroestructurade SiGe, transistors field effect high mobility of GaAs, InGaAs, InP, InGaSby GaN, and more recently effect transistors field Diamond. He has also investigated quantum effect devices based on GaAs heteroestructurasde. Currently, his research interests focus on physics, technology, modeling and reliability of field-effect transistors based on novel compounds III-V semiconductors for applications in future logic circuits. In addition to these fields, Prof. del Alamo has researched technology and pedagogy needed in the implementation of remote laboratories, through the internet, for the Promotion of education in science and engineering worldwide (iLab Project). Prof. del Alamo students have won numerous awards for the best presentations at national and international conferences. For his research on InGaAs FETs effect, he was awarded the Intel Award for Technical Excellence Semiconductor Research Corporationen 2012 Outstanding Researcher Award in 2012 and emerging devices. The Professor del Alamo teaches undergraduate and graduate in electronics, electronic devices and circuits, and advanced physics of semiconductor devices. He has received several teaching awards at MIT and other institutions. Among them, in 1992 he was awarded the Baker Award for Excellence in Teaching Degree. In 1993 he received the Award Edgertonal Professor Young. In 2001, he received the Louis Smullin Award for Excellence in Teaching. In 2002, Amar Bose received the Award for Excellence in Teaching. In 2003, he was named MacVicar Faculty Fellow. In 2012, he was awarded the Education Award given by the Society of the IEEE Electron Devices "for pioneering contributions to the development of remote laboratories for education of microelectronics worldwide." From 1991 to 1996, Prof. del Alamo was a Presidential Young Investigator National Science Foundation USA. In 1999 he was elected a corresponding member of the Royal Spanish Academy of Engineering. In 2005 and 2014, respectively, he was elected a Fellow of the IEEE and the American Physical Society. Among other activities, Prof. del Alamo was editor of IEEE Electron Device Letters from 2005 to 2014. He has served on numerous committees of international conferences.