1. Direct growth by molecular beam epitaxy and applications of compact high-In-composition InGaN layers on Si without any buffer layers.

2. Growth by molecular beam epitaxy and applications of In(Ga)N quantum dots on high-In-composition InGaN.

3. Selective-area growth by chemical beam epitaxy and applications of position controlled In(Ga)N quantum dots and nanocolumns on Si.

4. Self-aligned epitaxial growth by molecular beam epitaxy and applications of metal nanocrystals on In(Ga)N quantum dots and nanocolumns.

5. Biosensors based on functionalized InN/InGaN quantum dots.

6. Plasmon enhanced nanostructure solar cells based on In(Ga)N quantum dots and nanocolumns with self-aligned epitaxial metal nanocrystals.

7. Plasmon enhanced single photon sources at telecom wavelengths based on In(Ga)N quantum dots with self-aligned epitaxial metal nanocrystals.

Most of these research topics are carried out in close collaboration with the group of M.A. Sanchez Garcia and E. Calleja at ISOM.